creat by art - ultrafast, soft recovery characteristics - high junction temperature up to 175c - negligible leakage sustain the high operation temperature - planar passivated for voltage ruggedness and reliability - very low stored charge and its soft recovery minimize ringing and electronical noise to reduce power loss in associated mosfet or igbt - high capability for high di/dt operation. - high surge current capability - halogen-free according to iec 61249-2-21 definition - aec-q101 qualified ideal solution used as freewheeling diodes , features extremel y low peak recovery current helping to significantly reduce snubbing, and lower switching losses in igbt, especially as heavy duty applications demanding long term reliability. such as inverters , uninterrupted power supply, motor drive and other mission-critical systems where the high frequency and high efficiency is needed. the series with negligible leakage, is an immediatel y competitive advantage for high temperature environment. symbol unit v rrm v i f(av) a r jc c/w t j c t stg c document number: ds_d1501012 version: a15 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec typical applications mechanical data case: to-220ac molding compound, ul flammability classification rating 94v-0 packing code with suffix "g" means green compound (halogen-free) polarity: as marked mounting torque: 0.56 nm weight: 1.7g (approximately) UGA15120 taiwan semiconductor 15a, 1200v ultrafast power rectifier features terminal: matte tin plated leads, solderable per jesd 22-b102 meet jesd 201 class 1a whisker test to-220ac maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter UGA15120 maximum repetitive peak reverse voltage 1200 maximum average forward rectified current 15 non-repetitive peak forward surge current 8.3ms single sine-wave i fsm 200 a maximum instantaneous forward voltage (note 1) if= 15 a v f 2.9 v 58 maximum reverse current @ rated vr i r typ max t j =25 c t j =125 c 15 - 55 to +175 a 5 100 reverse recovery time t rr typ max t j =25 , i f =0.5a, i r =1a, i rr =0.25a 48 storage temperature range - 55 to +175 note 1: pulse test with pw=300 s, 1% duty cycle typical thermal resistance ns t j =25 , i f =1a, di f /dt= -100a/ s, v r =30v -65 2 operating junction temperature range 1 2
(t a =25c unless otherwise noted) document number: ds_d1501012 version: a15 ratings and characteristics curves UGA15120 taiwan semiconductor order information (example) 0 5 10 15 20 0 25 50 75 100 125 150 175 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink 0 50 100 150 200 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current 8.3ms single half sine wave 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics t j =125 c t j =25 c 0.1 1 10 100 00.511.522.53 instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics t j =125 c pulse width=300 s 1% duty cycle t j =25 c UGA15120 c0g green compound ? code packing ? code part ? no.
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 0.00 1.60 0.000 0.063 h 13.19 14.79 0.519 0.582 i 4.95 5.20 0.195 0.205 j 4.42 4.76 0.174 0.187 k 1.14 1.40 0.045 0.055 l 5.84 6.86 0.230 0.270 m 2.20 2.80 0.087 0.110 n 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1501012 version: a15 marking diagram UGA15120 taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) to-220ac 10 100 1000 0.1 1 10 100 junction c apacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance f=1.0mhz vsig=50mvp-p
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